可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| NSF030120D7A0 | NSF030120D7A0J | 934667963118 | SOT8070-1 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationNSF030120D7A0
1200 V, 30 mΩ, N-channel SiC MOSFET
The NSF030120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
Features and benefits
Excellent RDSon temperature stability
Very low switching losses
Fast reverse recovery
Fast switching speed
Temperature independent turn-off switching losses
Very fast and robust intrinsic body diode
Faster commutation and improved switching due to the additional Kelvin source pin
Applications
E-vehicle charging infrastructure
Photovoltaic inverters
Switch mode power supply
Uninterruptable power supply
Motor drives
參數(shù)類型
| 型號(hào) | Product status | Qualification | Drain-source breakdown voltage (V) | Drain-source on-state resistance at 15 V (mΩ) | Drain-source on-state resistance at 18 V (mΩ) | ID [max] (A) | Rth(j-c) [typ] (K/W) | Package name | QG(tot) [typ] (nC) | Tj [max] (°C) |
|---|---|---|---|---|---|---|---|---|---|---|
| NSF030120D7A0 | Production | Industrial | 1200 | 40 | 30 | 67 | 0.4 | TO-263-7 | 113 | 175 |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NSF030120D7A0 | NSF030120D7A0J (934667963118) |
Active | 30120D7A0 |
TO-263-7 (SOT8070-1) |
SOT8070-1 | SOT8070-1_118 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
|
描述 The SiC half-bridge evaluation board facilitates double-pulse testing of SiC MOSFETs in a bottom-side cooled package (TO-263-7). The device has been designed with low inductance in mind and incorporates a high-bandwidth current shunt, allowing for the evaluation of switching performance with optimal precision. Moreover, it can be employed for thermal investigations and continuous operation at several kilowatts.
|
類型 Evaluation board
|
Quick links
|
Shop link
|
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NSF030120D7A0 | NSF030120D7A0J | NSF030120D7A0 |
|
|
文檔 (5)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| NSF030120D7A0 | 1200 V, 30 mΩ, N-channel SiC MOSFET | Data sheet | 2024-05-14 |
| SOT8070-1 | plastic single-ended surface-mounted package; 7 leads | Package information | 2024-05-13 |
| SOT8070-1_118 | D2PAK-7L; Reel pack for SMD, 13"; Q2/T3 product orientation | Packing information | 2024-05-15 |
| NSF030120D7A0_model_LTspice_V1_0 | NSF030120D7A0 LTspice model | SPICE model | 2024-05-21 |
| UM90031 | A guide to using Nexperia SiC MOSFET LTspice models | User manual | 2024-07-02 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| NSF030120D7A0_model_LTspice_V1_0 | NSF030120D7A0 LTspice model | SPICE model | 2024-05-21 |
訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| NSF030120D7A0 | NSF030120D7A0J | 934667963118 | Active | SOT8070-1_118 | 800 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
NSF030120D7A0
1200 V, 30 mΩ, N-channel SiC MOSFET