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Click here for more informationPMPB29XPE
20 V, single P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
2.3 kV ESD protected
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Hard disk and computing power management
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | VESD (kV) (kV) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMPB29XPE | SOT1220 | DFN2020MD?6 | Production | P | 1 | -20 | 12 | 32.5 | 38 | 2300 | 150 | -5 | 7 | 30 | 1.7 | -0.68 | N | 2970 | 245 | 2012-12-11 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMPB29XPE | PMPB29XPE,115 (934066873115) |
Discontinued / End-of-life | 1T |
DFN2020MD?6 (SOT1220) |
SOT1220 |
REFLOW_BG-BD-1
|
SOT1220_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMPB29XPE | PMPB29XPE,115 | PMPB29XPE |
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文檔 (22)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMPB29XPE | 20 V, single P-channel Trench MOSFET | Data sheet | 2017-05-04 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| Nexperia_asset_document_brochure_autoDFN_CN_LR | 小巧輕便的汽車 二極管和晶體管 | Brochure | 2022-04-26 |
| SOT1220 | 3D model for products with SOT1220 package | Design support | 2018-08-23 |
| Nexperia_AutoDFN_factsheet_2022 | Small & light automotive diodes and transistors | Leaflet | 2022-04-13 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN2020MD-6_SOT1220_mk | plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
| SOT1220 | plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-06-02 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| nexperia_report_aoi_inspection_dfn_201808 | Automatic Optical Inspection of DFN Components | Report | 2018-09-03 |
| nexperia_report_aoi_inspection_dfn_201808 | Automatic Optical Inspection of DFN Components | Report | 2018-09-03 |
| PMPB29XPE_19_10_2012 | PMPB29XPE Spice model | SPICE model | 2013-12-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMPB29XPE_19_10_2012 | PMPB29XPE Spice model | SPICE model | 2013-12-13 |
| SOT1220 | 3D model for products with SOT1220 package | Design support | 2018-08-23 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PMPB29XPE
20 V, single P-channel Trench MOSFET
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