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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PSMN4R8-100PSE

N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package

Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of Nexperia's "NextPower Live" portfolio, the PSMN4R8-100PSE is robust enough to withstand substantial in-rush and fault condition currents during turn on/off, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on 48 V backplanes / supply rails.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Enhanced safe operating area (SOA) for superior protection during linear mode operation

  • Very low RDS(on) for low conduction losses

Applications

  • Electronic fuse

  • Hot-swap / Soft-start

  • Uninterruptible power supplies

  • Motor control

參數(shù)類型

型號(hào) Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN4R8-100PSE SOT78 TO-220AB End of life N 1 100 5 175 120 59 196 405 227 3 N 10665 674 2014-05-16

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN4R8-100PSE PSMN4R8-100PSEQ
(934068633127)
Discontinued / End-of-life PSMN4R8 100PSE SOT78
TO-220AB
(SOT78)
SOT78 SOT78_127

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PSMN4R8-100PSE PSMN4R8-100PSEQ PSMN4R8-100PSE rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (17)

文件名稱 標(biāo)題 類型 日期
PSMN4R8-100PSE N-channel 100 V, 5 mΩ standard level MOSFET with improved SOA in TO220 package Data sheet 2018-04-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2021-05-21
SOT78 3D model for products with SOT78 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT78 plastic, single-ended package (heatsink mounted, 1 mounting hole); 3 leads; 2.54 mm pitch; 15.6 mm x 10 mm x 4.4 mm body Package information 2020-04-21
Reliability_information_template_t6_sot78 Reliability Information T6 SOT78 Quality document 2023-03-24
T6_SOT78_PSMN4R8-100PSE_Nexperia_Quality_document PSMN4R8-100PSE Quality document Quality document 2023-03-23
PSMN4R8-100PSE_Spice PSMN4R8-100PSE SPICE model SPICE model 2014-11-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN4R8-100PSE_RCthermal PSMN4R8-100PSE Thermal design model Thermal design 2014-11-12
PSMN4R8-100PSE_FlowTherm PSMN4R8-100PSE Thermal model Thermal model 2014-11-12

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
PSMN4R8-100PSE_Spice PSMN4R8-100PSE SPICE model SPICE model 2014-11-12
PSMN4R8-100PSE_RCthermal PSMN4R8-100PSE Thermal design model Thermal design 2014-11-12
PSMN4R8-100PSE_FlowTherm PSMN4R8-100PSE Thermal model Thermal model 2014-11-12
SOT78 3D model for products with SOT78 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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