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Click here for more informationPBSS4032SN
30 V, 5.7 A NPN/NPN low V_CEsat (BISS) transistor
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- Optimized switching time
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
- DC-to-DC conversion
- Battery-driven devices
- Power management
- Charging circuits
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) | channel type (e) | Configuration | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|
| PBSS4032SN | SOT96-1 | SO8 | 4.9 x 3.9 x 1.75 | NPN | 2 | 730.0 | 30.0 | 5700.0 | 300.0 | N |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS4032SN | PBSS4032SN,115 (934063415115) |
Obsolete | 4032SN |
SO8 (SOT96-1) |
SOT96-1 |
SO-SOJ-REFLOW
SO-SOJ-WAVE WAVE_BG-BD-1 |
SOT96-1_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS4032SN | PBSS4032SN,115 | PBSS4032SN |
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文檔 (13)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS4032SN | 30 V, 5.7 A NPN/NPN low V_CEsat (BISS) transistor | Data sheet | 2018-08-28 |
| AN10909 | Low VCEsat transistors in medium power loadswitch applications | Application note | 2013-03-14 |
| AN11045 | Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors | Application note | 2013-03-04 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SO8_SOT96-1_mk | plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body | Marcom graphics | 2017-01-28 |
| SOT96-1 | plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body | Package information | 2020-04-21 |
| PBSS4032SN_Nexperia_Product_Quality | PBSS4032SN Nexperia Product Quality | Quality document | 2019-05-20 |
| PBSS4032SN_Nexperia_Product_Reliability | PBSS4032SN Nexperia Product Reliability | Quality document | 2019-04-29 |
| SO-SOJ-REFLOW | Footprint for reflow soldering | Reflow soldering | 2009-10-08 |
| PBSS4032SN | PBSS4032SN SPICE model | SPICE model | 2024-08-27 |
| SO-SOJ-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
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模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS4032SN | PBSS4032SN SPICE model | SPICE model | 2024-08-27 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS4032SN
30 V, 5.7 A NPN/NPN low V_CEsat (BISS) transistor
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