可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PBSS4160DS-Q | PBSS4160DS-QX | 934664887115 | SOT457 | 訂單產(chǎn)品 |
| PBSS4160DS-Q | PBSS4160DS-QH | 934664887125 | SOT457 | 訂單產(chǎn)品 |
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Click here for more informationPBSS4160DS-Q
60 V, 1 A NPN/NPN low VCEsat transistor
NPN/NPN low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
PNP/PNP complement: PBSS5160DS-Q
Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Dual low power switches (e.g. motors, fans)
Automotive applications
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) | Product status | channel type (e) | Nr of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | VCEsat [max] (NPN) (mV) | RCEsat@IC [max] (mΩ) | hFE [min] | fT [typ] (MHz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS4160DS-Q | SOT457 | TSOP6 | 2.9 x 1.5 x 1 | Production | NPN | 2 | 560 | 60 | 1 | 250 | 250 | 250 | 220 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS4160DS-Q | PBSS4160DS-QX (934664887115) |
Active | B8 |
TSOP6 (SOT457) |
SOT457 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT457_115 |
| PBSS4160DS-QH (934664887125) |
Active | B8 | SOT457_125 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS4160DS-Q | PBSS4160DS-QX | PBSS4160DS-Q |
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| PBSS4160DS-Q | PBSS4160DS-QH | PBSS4160DS-Q |
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文檔 (12)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS4160DS-Q | 60 V, 1 A NPN/NPN low VCEsat transistor | Data sheet | 2023-09-21 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT457 | 3D model for products with SOT457 package | Design support | 2022-11-04 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSOP6_SOT457_mk | plastic, surface-mounted package (TSOP6); 6 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT457 | plastic, surface-mounted package (SC-74; TSOP6); 6 leads | Package information | 2023-03-03 |
| SOT457_115 | TSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| SOT457_125 | TSOP6; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-21 |
| PBSS4160DS-Q_Nexperia_Product_Reliability | PBSS4160DS-Q Nexperia Product Reliability | Quality document | 2024-04-23 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| MAR_SOT457 | MAR_SOT457 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設(shè)計/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT457 | 3D model for products with SOT457 package | Design support | 2022-11-04 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PBSS4160DS-Q | PBSS4160DS-QX | 934664887115 | Active | SOT457_115 | 3,000 | 訂單產(chǎn)品 |
| PBSS4160DS-Q | PBSS4160DS-QH | 934664887125 | Active | SOT457_125 | 3,000 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS4160DS-Q
60 V, 1 A NPN/NPN low VCEsat transistor
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