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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74AUP1G0832GF

Low-power 3-input AND-OR gate

The 74AUP1G0832 is a single 3-input AND-OR gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 0.8 V to 3.6 V

  • CMOS low power dissipation

  • High noise immunity

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類型

型號(hào) Package name
74AUP1G0832GF XSON6

PCB Symbol, Footprint and 3D Model

Model Name 描述

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

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封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74AUP1G0832GF 74AUP1G0832GF,132
(935281326132)
Obsolete SOT891
XSON6
(SOT891)
SOT891 REFLOW_BG-BD-1
SOT891_132

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74AUP1G0832GF 74AUP1G0832GF,132 74AUP1G0832GF rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (14)

文件名稱 標(biāo)題 類型 日期
74AUP1G0832 Low-power 3-input AND-OR gate Data sheet 2023-07-13
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11052 Pin FMEA for AUP family Application note 2019-01-09
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
SOT891 3D model for products with SOT891 package Design support 2019-10-03
aup1g08 74AUP1G08 IBIS model IBIS model 2014-12-14
aup1g0832 aup1g0832 IBIS model IBIS model 2014-12-21
Nexperia_document_Logic_CombinationLogic_infocard_201710 Combination logic solutions card Leaflet 2019-08-09
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1010-6_SOT891_mk plastic, extremely thin small outline package; 6 terminals; 0.55 mm pitch; 1 mm x 1 mm x 0.5 mm body Marcom graphics 2017-01-28
SOT891 plastic, leadless extremely thin small outline package; 6 terminals; 0.35 mm pitch; 1 mm x 1 mm x 0.5 mm body Package information 2020-04-21
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
MAR_SOT891 MAR_SOT891 Topmark Top marking 2013-06-03

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
aup1g08 74AUP1G08 IBIS model IBIS model 2014-12-14
aup1g0832 aup1g0832 IBIS model IBIS model 2014-12-21
SOT891 3D model for products with SOT891 package Design support 2019-10-03

PCB Symbol, Footprint and 3D Model

Model Name 描述

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

Click here for more information

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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