Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW)
The NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board
Key features & benefits
The Gallium Nitride (GaN) FET GAN041-650WSB (35 mΩ RDS(on) typ.) used in this evaluation board is a normally-off device, comprised of a high-voltage depletion-mode GaN HEMT (High Electron Mobility Transistor) combined with a tailored 30 V Si-FET in a cascode configuration.It is assembled as a die-on-die stack for best performance and minimized internal parasitics, housed in a 3-pin TO-247 package.
Key features of GAN041-650WSB include:
- Very low switching losses
- Rugged gate with high threshold voltage, Vth = 4 V, enables single supply gate drive voltage 0 V to 10 - 12 V.
- Very good QGD/QGS << 1 ratio, protects against parasitic turn-on
- Minimal reverse-recovery
- Best in class third-quadrant off-state conduction performance for wide-bandgap devices
Key applications
- Solar Inverters
- Energy Storage Systems
- Servo Drives
- Server/Telecom PSU
- Welding Inverters
板上的產品 (2)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Production | |
|
74HCT1G86GW | 2-input EXCLUSIVE-OR gate | Production |
相關板塊 (5)
| Board | Description | Type | Quick links | Shop link | |
|---|---|---|---|---|---|
|
NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board | 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | 訂單 | |
|
NX-DP-GAN039-TSC-Double-pulse-evaluation-board | Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | 訂單 | |
|
NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board | 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package | Evaluation board | 訂單 | |
|
4-kW-analogue-bridgeless-totem-pole-PFC-evaluation-board | 4 kW analogue bridgeless totem-pole PFC evaluation board | Evaluation board | ||
|
nx-hb-gan111ul-half-bridge-evaluation-board | NX-HB-GAN111UL half-bridge evaluation board | Evaluation board |
板上的產品 (2)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
|
GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Production | |
|
|
74HCT1G86GW | 2-input EXCLUSIVE-OR gate | Production |
相關板塊 (5)
| Board | Description | Type | Quick links | Shop link | |
|---|---|---|---|---|---|
|
|
NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board | 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | 訂單 | |
|
|
NX-DP-GAN039-TSC-Double-pulse-evaluation-board | Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package | Evaluation board | 訂單 | |
|
|
NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board | 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package | Evaluation board | 訂單 | |
|
|
4-kW-analogue-bridgeless-totem-pole-PFC-evaluation-board | 4 kW analogue bridgeless totem-pole PFC evaluation board | Evaluation board | ||
|
|
nx-hb-gan111ul-half-bridge-evaluation-board | NX-HB-GAN111UL half-bridge evaluation board | Evaluation board |
文檔 (2)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GaNFET_evaluation_board_Terms_Of_Use | GaN FET EVALUATION BOARD TERMS OF USE | Other type | 2023-10-10 |
| UM90010 | NX-HB-GAN041UL 3.5 kW Half-Bridge evaluation board using GAN041-650WSB | User manual | 2023-10-23 |