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Click here for more informationPH3855L
N-channel TrenchMOS logic level FET
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
- Suitable for logic level gate drive sources
Applications
- 12 V and 24 V loads
- DC-to-DC convertors
- General purpose power switching
- Motors, lamps and solenoids
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PH3855L | SOT669 | LFPAK56; Power-SO8 | End of life | N | 1 | 55 | 36 | 40 | 45 | 175 | 24 | 5.5 | 50 | 25 | 1.5 | N | 765 | 125 | 2011-01-27 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PH3855L | PH3855L,115 (934058855115) |
Obsolete | 3855L P** XXYY AZ Batch No. |
LFPAK56; Power-SO8 (SOT669) |
SOT669 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT669_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PH3855L | PH3855L,115 | PH3855L |
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Series
文檔 (15)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PH3855L | N-channel TrenchMOS logic level FET | Data sheet | 2009-02-23 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2025-03-20 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PH3855L | PH3855L SPICE model | SPICE model | 2012-06-08 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PH3855L
N-channel TrenchMOS logic level FET
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