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30 V, 200 mA P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Alternatives
Features and benefits
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ESD protection up to 2 kV
- AEC-Q101 qualified
Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
參數類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NX3008PBKT | SOT416 | SC-75 | End of life | P | 1 | -30 | 4100 | 6500 | 150 | -0.2 | 0.09 | 0.55 | 0.3 | -0.9 | Y | 31 | 6.5 | 2011-07-19 |
封裝
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NX3008PBKT | NX3008PBKT,115 (934065626115) |
Obsolete |
SC-75 (SOT416) |
SOT416 | SOT416_115 |
環(huán)境信息
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NX3008PBKT | NX3008PBKT,115 | NX3008PBKT |
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文檔 (13)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| NX3008PBKT | 30 V, 200 mA P-channel Trench MOSFET | Data sheet | 2011-08-01 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2020-04-21 |
| NX3008PBKT_30_01_2012 | NX3008PBKT Spice parameter | SPICE model | 2012-04-16 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
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模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| NX3008PBKT_30_01_2012 | NX3008PBKT Spice parameter | SPICE model | 2012-04-16 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
NX3008PBKT
30 V, 200 mA P-channel Trench MOSFET
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