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Click here for more informationPBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.
PNP complement: PBS3540E.
Alternatives
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- AEC-Q101 qualified
Applications
- DC-to-DC conversion
- MOSFET gate driving
- Motor control
- Charging circuits
- Low power switches (e.g. motors, fans)
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | fT [min] (MHz) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|
| PBSS2540E | SOT416 | SC-75 | 1.6 x 0.75 x 0.9 | NPN | 150.0 | 40.0 | 500.0 | 200.0 | 250.0 | N |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS2540E | PBSS2540E,115 (934059169115) |
Obsolete |
SC-75 (SOT416) |
SOT416 | SOT416_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS2540E | PBSS2540E,115 | PBSS2540E |
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文檔 (5)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS2540E | 40 V, 500 mA NPN low VCEsat (BISS) transistor | Data sheet | 2009-11-23 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2025-01-31 |
| PBSS2540E | PBSS2540E SPICE model | SPICE model | 2024-08-27 |
支持
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模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS2540E | PBSS2540E SPICE model | SPICE model | 2024-08-27 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
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