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Ultra low capacitance double rail-to-rail ESD protection
Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices in leadless ultra small Surface-Mounted Device (SMD) plastic packages.
The devices are designed to protect two Hi-Speed data lines or high-frequency signal lines from the damage caused by ESD and other transients.
PRTR5V0U2F and PRTR5V0U2K integrate two ultra low capacitance rail-to-rail ESD protection channels and one additional ESD protection diode each to ensure signal line protection even if no supply voltage is available.
Features and benefits
ESD protection of two Hi-Speed data lines or high-frequency signal lines
Ultra low input/output to ground capacitance: C(I/O-GND) = 1 pF
ESD protection up to 8 kV
IEC 61000-4-2, level 4 (ESD)
Very low clamping voltage due to an integrated additional ESD protection diode
Very low reverse current
AEC-Q101 qualified
Leadless ultra small SMD plastic packages
Applications
USB 2.0 interfaces
Digital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces
Mobile and cordless phones
Personal Digital Assistants (PDA)
Digital cameras
Wide Area Network (WAN) / Local Area Network (LAN) systems
PCs, notebooks, printers and other PC peripherals
文檔 (2)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PRTR5V0U2F_PRTR5V0U2K | Ultra low capacitance double rail-to-rail ESD protection | Data sheet | 2023-04-13 |
| AN10753 | ESD protection for USB 2.0 interfaces | Application note | 2021-04-14 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.