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Click here for more information參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) |
|---|---|---|---|
| PDTA124EE | SOT416 | SC-75 | 1.6 x 0.75 x 0.9 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PDTA124EE | PDTA124EE,115 (934051820115) |
Obsolete |
SC-75 (SOT416) |
SOT416 | SOT416_115 | ||
| PDTA124EE/A2,115 (934063179115) |
Obsolete | SOT416_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PDTA124EE | PDTA124EE,115 | PDTA124EE |
|
|
| PDTA124EE | PDTA124EE/A2,115 | PDTA124EE |
|
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Series
文檔 (6)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PDTA124E_SER | PNP resistor-equipped transistors R1 = 22 kOhm, R2 = 22 kOhm | Data sheet | 2025-04-14 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
| SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2025-01-31 |
| PDTA124EE | PDTA124EE SPICE model | SPICE model | 2024-08-27 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PDTA124EE | PDTA124EE SPICE model | SPICE model | 2024-08-27 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.