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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74AHCT594DB

8-bit shift register with output register

The 74AHC594; 74AHCT594 is a high-speed Si-gate CMOS device and is pin compatible with Low-Power Schottky TTL (LSTTL). It is specified in compliance with JEDEC standard No. 7-A.

The 74AHC594; 74AHCT594 is an 8-bit, non-inverting, serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. Separate clocks (SHCP and STCP) and direct overriding clears (SHR and STR) are provided on both the shift and storage registers. A serial output (Q7S) is provided for cascading purposes.

Both the shift and storage register clocks are positive-edge triggered. If the user wishes to connect both clocks together, the shift register will always be one count pulse ahead of the storage register.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 2.0 V to 5.5 V

  • Balanced propagation delays

  • All inputs have Schmitt-trigger action

  • Overvoltage tolerant inputs to 5.5 V

  • High noise immunity

  • CMOS low power dissipation

  • 8-bit serial-in, parallel-out shift register with storage

  • Independent direct overriding clears on shift and storage registers

  • Independent clocks for shift and storage registers

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level A

  • Input levels:

    • For 74AHC594: CMOS level

    • For 74AHCT594: TTL level

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

Applications

  • Serial-to parallel data conversion

  • Remote control holding register

參數(shù)類(lèi)型

型號(hào) Package name
74AHCT594DB SSOP16

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74AHCT594DB 74AHCT594DB,112
(935282015112)
Obsolete AHT594 SOT338-1
SSOP16
(SOT338-1)
SOT338-1 SSOP-TSSOP-VSO-REFLOW
SSOP-TSSOP-VSO-WAVE
暫無(wú)信息
74AHCT594DB,118
(935282015118)
Obsolete AHT594 暫無(wú)信息

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74AHCT594DB 74AHCT594DB,112 74AHCT594DB rohs rhf rhf
74AHCT594DB 74AHCT594DB,118 74AHCT594DB rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (8)

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
74AHC_AHCT594 8-bit shift register with output register Data sheet 2024-03-07
AN11106 Pin FMEA for AHC/AHCT family Application note 2019-01-09
ahct594 ahct594 IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SSOP16_SOT338-1_mk plastic, shrink small outline package; 16 leads; 0.65 mm pitch; 6.2 mm x 5.3 mm x 2 mm body Marcom graphics 2017-01-28
SOT338-1 plastic, shrink small outline package; 16 leads; 0.65 mm pitch; 6.2 mm x 5.3 mm x 2 mm body Package information 2022-06-20
SSOP-TSSOP-VSO-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
ahct594 ahct594 IBIS model IBIS model 2013-04-08

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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