可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| PSMN1R2-80CSE | PSMN1R2-80CSEJ | 934666615118 | SOT8005A | 訂單產(chǎn)品 |
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Click here for more informationPSMN1R2-80CSE
N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package
N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212).
PSMN1R2-80CSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON.
Features and benefits
Fully optimized Safe Opertating Area (SOA) for superior linear mode operation
Low RDSon for low I2R conduction losses
CCPAK1212i package for applications that demand the highest performance and reliability
Inverted package, suitable for top-side cooling
Applications
Hot swap
Load switch
Soft start
E-fuse
Telecommunication systems based on a 48 V backplane/supply rail
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN1R2-80CSE | SOT8005A | CCPAK1212i | Qualification | N | 1 | 80 | 1.18 | 175 | 375 | 27.3 | 233 | 935 | 76.5 | 2.8 | N | 18705 | 4363 | 2024-05-06 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMN1R2-80CSE | PSMN1R2-80CSEJ (934666615118) |
Samples available / Development | XP1E2S80C |
CCPAK1212i (SOT8005A) |
SOT8005A | 暫無(wú)信息 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN1R2-80CSE | PSMN1R2-80CSEJ | PSMN1R2-80CSE |
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Series
文檔 (18)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PSMN1R2-80CSE | N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Data sheet | 2024-12-06 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN50005 | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
| AN50006 | Power MOSFETs in linear mode | Application note | 2022-04-12 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| SOT8005A | 3D model for products with SOT8005A package | Design support | 2024-11-20 |
| nexperia_document_CCPAK-MOSFETs_2024_Chinese | CCPAK MOSFET LEAFLET CN | Leaflet | 2024-12-02 |
| nexperia_document_CCPAK_MOSFETs_2024 | Nexperia CCPAK MOSFETs | Leaflet | 2024-11-19 |
| SOT8005A | Plastic, surface mounted copper clip package (CCPAK1212i); 12 terminals;2.0 mm pitch, 12 mm × 12 mm × 2.5 mm body | Package information | 2024-12-02 |
| T12_SOT8005A_PSMN1R2-80CSE_Nexperia_Quality_Reliability_document | T12_SOT8005A_PSMN1R2-80CSE_Nexperia_Quality_Reliability_document | Quality document | 2024-11-01 |
| PSMN1R2-80CSE | PSMN1R2-80CSE RC thermal model | Thermal model | 2024-09-10 |
| PSMN1R2-80CSE_Cauer | PSMN1R2-80CSE Cauer model | Thermal model | 2024-09-10 |
| PSMN1R2-80CSE_Foster | PSMN1R2-80CSE Foster model | Thermal model | 2024-09-10 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PSMN1R2-80CSE | PSMN1R2-80CSE RC thermal model | Thermal model | 2024-09-10 |
| PSMN1R2-80CSE_Cauer | PSMN1R2-80CSE Cauer model | Thermal model | 2024-09-10 |
| PSMN1R2-80CSE_Foster | PSMN1R2-80CSE Foster model | Thermal model | 2024-09-10 |
| SOT8005A | 3D model for products with SOT8005A package | Design support | 2024-11-20 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|
樣品
作為 Nexperia 的客戶(hù)，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PSMN1R2-80CSE
N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package
從安世半導(dǎo)體購(gòu)買(mǎi)
| SKU | 庫(kù)存* | MOQ | 單位價(jià)格 | 數(shù)量 |
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