可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PSC1065H | PSC1065HJ | 934662645118 | SOT8017 | 訂單產(chǎn)品 |
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Click here for more informationPSC1065H
650 V, 10 A SiC Schottky diode in DPAK R2P
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Features and benefits
Zero forward and reverse recovery
Temperature independent fast and smooth switching performance
Outstanding figure-of-merit (Qc x VF)
High IFSM capability
High power density
Reduced system cost
System miniaturization
Reduced EMI
Applications
Switch Mode Power Supply (SMPS)
AC-DC and DC-DC converter
Battery charging infrastructure
Server and telecom power supply
Uninterruptible Power Supply (UPS)
Photovoltaic inverters
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) | VRRM [max] (V) | VF [max] (V) | @IF [max] @140 C (A) | IR [max] (μA) | @VR (V) | IFSM [max] (A) | Nr of functions | Configuration | Ptot [max] (W) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSC1065H | SOT8017 | DPAK R2P | 6.16 x 6.54 x 2.29 | 650 | 1.8 | 10 | 60 | 650 | 440 | single | single | 58 | N |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSC1065H | PSC1065HJ (934662645118) |
Active | PSC1065H |
DPAK R2P (SOT8017) |
SOT8017 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
暫無信息 |
文檔 (9)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSC1065H | 650 V, 10 A SiC Schottky diode in DPAK R2P | Data sheet | 2024-02-08 |
| SOT8017 | 3D model for products with SOT8017 package | Design support | 2023-03-13 |
| Nexperia_document_SiC-factsheet | SiC Schottky Diodes - New Silicon Carbide Diode portfolio for high-power | Leaflet | 2021-11-05 |
| SOT8017 | Plastic, single-ended surface-mounted package (DPAK R2P); Real-2-Pin configuration; 4.58 mm pitch; 6.16 mm x 6.54 mm x 2.29 mm body | Package information | 2024-01-30 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PSC1065H | PSC1065H SPICE model | SPICE model | 2024-10-14 |
| TN90007 | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
| TN90007 | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
訂購、定價(jià)與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PSC1065H | PSC1065HJ | 934662645118 | Active | 暫無信息 | 2,500 | 訂單產(chǎn)品 |
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PSC1065H
650 V, 10 A SiC Schottky diode in DPAK R2P
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