可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PMZB670UPE | PMZB670UPE,315 | 934065872315 | SOT883B | 訂單產(chǎn)品 |
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Click here for more informationPMZB670UPE
20 V, single P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
不建議用在新設(shè)計中(NRND)。
Alternatives
Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile of 0.37 mm
Applications
Relay driver
High-speed line driver
High-side load switch
Switching circuits
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMZB670UPE
|
SOT883B | DFN1006B-3 | Not for design in | P | 1 | -20 | 8 | 850 | 1500 | 150 | -0.68 | 0.18 | 0.76 | 0.36 | -0.9 | N | 58 | 21 | 2012-02-01 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
|
PMZB670UPE
|
PMZB670UPE,315 (934065872315) |
Active | 0000 1011 |
DFN1006B-3 (SOT883B) |
SOT883B |
REFLOW_BG-BD-1
|
SOT883B_315 |
文檔 (18)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMZB670UPE | 20 V, single P-channel Trench MOSFET | Data sheet | 2017-05-04 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-02-18 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-03-20 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| SOT883B | 3D model for products with SOT883B package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1006B-3_SOT883B_mk | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body | Marcom graphics | 2017-01-28 |
| SOT883B | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body | Package information | 2022-05-20 |
| SOT883B_315 | DFN1006B-3; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-06-12 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PMZB670UPE_06_02_2012 | PMZB670UPE.06_02_2012 Spice parameter | SPICE model | 2012-04-16 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMZB670UPE_06_02_2012 | PMZB670UPE.06_02_2012 Spice parameter | SPICE model | 2012-04-16 |
| SOT883B | 3D model for products with SOT883B package | Design support | 2020-01-22 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PMZB670UPE | PMZB670UPE,315 | 934065872315 | Active | SOT883B_315 | 10,000 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PMZB670UPE
20 V, single P-channel Trench MOSFET
從安世半導(dǎo)體購買
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