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Click here for more informationPBSM5240PF
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package.
Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | VCEO [max] (V) | IC [max] (A) | hFE [min] | hFE [max] | RCEsat@IC [typ] (mΩ) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|
| PBSM5240PF | SOT1118 | DFN2020-6 | End of life | -40.0 | -1.8 | 300.0 | 800.0 | 240.0 | Y |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSM5240PF | PBSM5240PF,115 (934065127115) |
Discontinued / End-of-life | 1G |
DFN2020-6 (SOT1118) |
SOT1118 |
REFLOW_BG-BD-1
|
SOT1118_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSM5240PF | PBSM5240PF,115 | PBSM5240PF |
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文檔 (9)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSM5240PF | 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET | Data sheet | 2017-06-08 |
| AN10910 | Protecting charger interfaces and typical battery charging topologies with external bypass transistors | Application note | 2021-04-12 |
| SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN2020-6_SOT1118_mk | plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
| SOT1118 | plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-06-02 |
| PBSM5240PF_Nexperia_Product_Reliability | PBSM5240PF Nexperia Product Reliability | Quality document | 2024-04-23 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSM5240PF_NMOS | PBSM5240PF_NMOS SPICE model | SPICE model | 2012-07-22 |
支持
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模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSM5240PF_NMOS | PBSM5240PF_NMOS SPICE model | SPICE model | 2012-07-22 |
| SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSM5240PF
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET
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