可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| GANB8R0-040CBA | GANB8R0-040CBAZ | 934667631341 | WLCSP16_SOT8087 | 訂單產(chǎn)品 |
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Click here for more informationGANB8R0-040CBA
40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)
The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance.
Features and benefits
Enhancement mode - normally-off power switch
Bi-directional device
Ultra high switching speed capability
Ultra-low on-state resistance
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm
Applications
High-side load switch
OVP protection in smart phone USB port
DC-to-DC converters
Power switch circuits
Stand-by power system
參數(shù)類型
| 型號 | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GANB8R0-040CBA | WLCSP16_SOT8087 | WLCSP16 | Production | 1 | 40 | 8 | 125 | 14 | 5.5 | 15 | 1.35 | 566 | 243 | 2024-09-17 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GANB8R0-040CBA | GANB8R0-040CBAZ (934667631341) |
Active | 8R0ACBA |
WLCSP16 (WLCSP16_SOT8087) |
WLCSP16_SOT8087 | WLCSP16_SOT8087_341 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| GANB8R0-040CBA | GANB8R0-040CBAZ | GANB8R0-040CBA |
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文檔 (5)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| GANB8R0-040CBA | 40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) | Data sheet | 2025-01-31 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| WLCSP16_SOT8087 | WLCSP16: wafer level chip-size package; 16 bumps (4 x 4) | Package information | 2024-12-05 |
| WLCSP16_SOT8087_341 | WLCSP16; Reel dry pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2024-03-28 |
模型
No documents available
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| GANB8R0-040CBA | GANB8R0-040CBAZ | 934667631341 | Active | WLCSP16_SOT8087_341 | 2,500 | 訂單產(chǎn)品 |
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GANB8R0-040CBA
40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)