可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| GANB4R8-040CBA | GANB4R8-040CBAZ | 934667630341 | WLCSP22_SOT8086 | 訂單產(chǎn)品 |
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Click here for more informationGANB4R8-040CBA
40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)
The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance.
Features and benefits
Enhancement mode - normally-off power switch
Bi-directional device
Ultra high switching speed capability
Ultra-low on-state resistance
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm
Applications
High-side load switch
OVP protection in smart phone USB port
DC-to-DC converters
Power switch circuits
Stand-by power system
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GANB4R8-040CBA | WLCSP22_SOT8086 | WLCSP22 | Production | 1 | 40 | 4.8 | 125 | 20 | 8.6 | 13 | 1.35 | 887 | 381 | 2024-04-10 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GANB4R8-040CBA | GANB4R8-040CBAZ (934667630341) |
Active | 4R8ACBA |
WLCSP22 (WLCSP22_SOT8086) |
WLCSP22_SOT8086 | WLCSP22_SOT8086_341 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| GANB4R8-040CBA | GANB4R8-040CBAZ | GANB4R8-040CBA |
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文檔 (19)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| GANB4R8-040CBA | 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP) | Data sheet | 2024-08-07 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| WLCSP22_SOT8086 | wafer level chip-size package | Package information | 2024-04-25 |
| WLCSP22_SOT8086_341 | WLCSP22; Reel dry pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2024-03-28 |
| GANB4R8-040CBA_LTspice | GANB4R8-040CBA LTspice model | SPICE model | 2024-06-25 |
| GANB4R8-040CBA_SIMetrix | GANB4R8-040CBA SIMetrix model | SPICE model | 2024-06-25 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| CauerModel_GANB4R8-040CBA | Cauer model GANB4R8-040CBA | Thermal model | 2024-06-25 |
| FosterModel_GANB4R8-040CBA | Foster model GANB4R8-040CBA | Thermal model | 2024-06-25 |
| GANB4R8-040CBA | GANB4R8-040CBA RC thermal model | Thermal model | 2024-06-25 |
| GANB4R8-040CBA_Cauer | GANB4R8-040CBA Cauer model | Thermal model | 2024-06-25 |
| GANB4R8-040CBA_Foster | GANB4R8-040CBA Foster model | Thermal model | 2024-06-25 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮書(shū): 功率GaN技術(shù)： 高效功率轉(zhuǎn)換的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
模型
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| GANB4R8-040CBA_LTspice | GANB4R8-040CBA LTspice model | SPICE model | 2024-06-25 |
| GANB4R8-040CBA_SIMetrix | GANB4R8-040CBA SIMetrix model | SPICE model | 2024-06-25 |
| CauerModel_GANB4R8-040CBA | Cauer model GANB4R8-040CBA | Thermal model | 2024-06-25 |
| FosterModel_GANB4R8-040CBA | Foster model GANB4R8-040CBA | Thermal model | 2024-06-25 |
| GANB4R8-040CBA | GANB4R8-040CBA RC thermal model | Thermal model | 2024-06-25 |
| GANB4R8-040CBA_Cauer | GANB4R8-040CBA Cauer model | Thermal model | 2024-06-25 |
| GANB4R8-040CBA_Foster | GANB4R8-040CBA Foster model | Thermal model | 2024-06-25 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| GANB4R8-040CBA | GANB4R8-040CBAZ | 934667630341 | Active | WLCSP22_SOT8086_341 | 2,500 | 訂單產(chǎn)品 |
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GANB4R8-040CBA
40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)
從安世半導(dǎo)體購(gòu)買(mǎi)
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