可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| GANB1R2-040QBA | GANB1R2-040QBAZ | 934667629336 | SOT8092-1 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationGANB1R2-040QBA
40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
The GANB1R2-040QBA is a 40 V, 1.2 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
Features and benefits
Enhancement mode - normally-off power switch
Bi-directional device
Ultra high frequency switching capability
Ultra-low on-state resistance
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm
Applications
High-side load switch
OVP protection in smart phone USB port
DC-to-DC converters
Power switch circuits
Stand-by power system
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | Automotive qualified | Ciss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|
| GANB1R2-040QBA | SOT8092-1 | VQFN16 | Production | 1 | 40 | 125 | 32 | 105 | N | 3500 | 2024-09-17 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GANB1R2-040QBA | GANB1R2-040QBAZ (934667629336) |
Active | 1R2AQBA |
VQFN16 (SOT8092-1) |
SOT8092-1 | 暫無(wú)信息 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| GANB1R2-040QBA | GANB1R2-040QBAZ | GANB1R2-040QBA |
|
|
文檔 (2)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| GANB1R2-040QBA | 40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Data sheet | 2025-03-12 |
| SOT8092-1 | VQFN16: very thin quad flatpack; no leads; 6 mm x 4 mm x 0.85 mm body | Package information | 2025-02-05 |
模型
No documents available
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線(xiàn)購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| GANB1R2-040QBA | GANB1R2-040QBAZ | 934667629336 | Active | 暫無(wú)信息 | 2,500 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶(hù)，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GANB1R2-040QBA
40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
從安世半導(dǎo)體購(gòu)買(mǎi)
| SKU | 庫(kù)存* | MOQ | 單位價(jià)格 | 數(shù)量 |
|---|