74AUP1G14GX4-Q100

Low-power Schmitt trigger inverter

Automotive qualified

The 74AUP1G14-Q100 is a single inverter with Schmitt-trigger input. This device ensures very low static and dynamic power consumption across the entire V_CC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using I_OFF. The I_OFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Features and benefits

Automotive product qualification in accordance with AEC-Q100 (Grade 1)
- Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Overvoltage tolerant inputs to 3.6 V
Low static power consumption; I_CC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Low noise overshoot and undershoot < 10 % of V_CC
I_OFF circuitry provides partial Power-down mode operation
Complies with JEDEC standards:
- JESD8-12 (0.8 V to 1.3 V)
- JESD8-11 (0.9 V to 1.65 V)
- JESD8-7 (1.65 V to 1.95 V)
- JESD8-5 (2.3 V to 2.7 V)
- JESD8C (2.7 V to 3.6 V)
ESD protection:
- HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
- CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

Applications

Wave and pulse shaper
Astable multivibrator
Monostable multivibrator

參數(shù)類型

型號	V_CC (V)	Logic switching levels	Output drive capability (mA)	f_max (MHz)	Nr of bits	Power dissipation considerations	T_amb (°C)	R_th(j-c) (K/W)	Package name
74AUP1G14GX4-Q100	0.8?-?3.6	CMOS	± 1.9	70	1	ultra low	-40~125	4	X2SON4

封裝

型號	可訂購的器件編號，（訂購碼(12NC)）	狀態(tài)	標(biāo)示	封裝	外形圖	回流焊/波峰焊	包裝
74AUP1G14GX4-Q100	74AUP1G14GX4-Q100Z (935691177147)	Active	pF	X2SON4 (SOT1269-2)	SOT1269-2		SOT1269-2_147

環(huán)境信息

型號	可訂購的器件編號	化學(xué)成分	RoHS	RHF指示符
74AUP1G14GX4-Q100	74AUP1G14GX4-Q100Z	74AUP1G14GX4-Q100

品質(zhì)及可靠性免責(zé)聲明

Series

文檔 (11)

文件名稱	標(biāo)題	類型	日期
74AUP1G14_Q100	Low-power Schmitt trigger inverter	Data sheet	2023-10-27
Nexperia_document_guide_MiniLogic_MicroPak_201808	MicroPak leadless logic portfolio guide	Brochure	2018-09-03
SOT1269-2	3D model for products with SOT1269-2 package	Design support	2023-02-02
SOT1269	3D model for products with SOT1269 package	Design support	2019-10-07
aup1g14	74AUP1G14 IBIS model	IBIS model	2018-05-25
Nexperia_document_leaflet_Logic_X2SON_packages_062018	X2SON ultra-small 4, 5, 6 & 8-pin leadless packages	Leaflet	2018-06-05
Nexperia_package_poster	Nexperia package poster	Leaflet	2020-05-15
XSON4_SOT1269-2_mk	plastic, leadless thermal enhanced extremely thin outline package, no leads; 4 terminals; 0.4 mm pitch; 0.6 mm x 0.6 mm x 0.32 mm body	Marcom graphics	2019-02-04
SOT1269-2	plastic, leadless thermal enhanced extremely thin outline package, no leads; 4 terminals; 0.4 mm pitch; 0.6 mm x 0.6 mm x 0.32 mm body	Package information	2020-08-18
SOT1269-2_147	X2SON4; Reel pack, SMD, 7"; Q2/T3 standard product orientation; Orderable part number ending ,147 or Z; Ordering code (12NC) ending 147	Packing information	2020-04-21
74AUP1G14GX4-Q100_Nexperia_Product_Reliability	74AUP1G14GX4-Q100 Nexperia Product Reliability	Quality document	2024-06-16

支持

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模型

文件名稱	標(biāo)題	類型	日期
aup1g14	74AUP1G14 IBIS model	IBIS model	2018-05-25
SOT1269-2	3D model for products with SOT1269-2 package	Design support	2023-02-02
SOT1269	3D model for products with SOT1269 package	Design support	2019-10-07

訂購、定價與供貨

型號	Orderable part number	Ordering code (12NC)	狀態(tài)	包裝	Packing Quantity	在線購買
74AUP1G14GX4-Q100	74AUP1G14GX4-Q100Z	935691177147	Active	SOT1269-2_147	10,000	訂單產(chǎn)品

樣品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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