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Click here for more information2N7002BKM
60 V N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Alternatives
Features and benefits
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 kV
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N7002BKM | SOT883 | DFN1006-3 | Not for design in | N | 1 | 60 | 1600 | 2000 | 150 | 0.45 | 0.4 | 1.2 | 0.715 | 1.6 | N | 41 | 4 | 2011-01-24 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 2N7002BKM | 2N7002BKM,315 (934064287315) |
Withdrawn / End-of-life | Z8 |
DFN1006-3 (SOT883) |
SOT883 |
REFLOW_BG-BD-1
|
SOT883_315 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 2N7002BKM | 2N7002BKM,315 | 2N7002BKM |
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文檔 (16)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 2N7002BKM | 60 V, 450 mA N-channel Trench MOSFET | Data sheet | 2017-06-02 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT883 | 3D model for products with SOT883 package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1006-3_SOT883_mk | plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Marcom graphics | 2017-01-28 |
| SOT883 | plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Package information | 2022-05-20 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| 2N7002BKM_8_18_2010 | 2N7002BKM_8_18_2010 Spice parameter | SPICE model | 2011-08-22 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 2N7002BKM_8_18_2010 | 2N7002BKM_8_18_2010 Spice parameter | SPICE model | 2011-08-22 |
| SOT883 | 3D model for products with SOT883 package | Design support | 2020-01-22 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
2N7002BKM
60 V N-channel Trench MOSFET
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