Key features
- 8 mm x 8 mm footprint
- 48 x power-density compared to wire bonded equivalents
- Advanced package design exceeds 2 x AEC-Q101
- Ultra low On-Resistance
- Copper clip technology gives low electrical and thermal resistance
- Best-in-class linear mode (SOA) performance in-rush and surge protection
Target applications
The versatility of the LFPAK88 makes it suitable for a wide variety of applications
| Automotive
| Industrial
|
Space efficiency
The compact 8 mm x 8 mm footprint of the LFPAK88 provides market-leading space efficiency, with up to 60% footprint saving compared to D2PAK and D2PAK-7 alternatives. In addition, it’s 1.6 mm height increases the overall space efficiency to 86%.
LFPAK88 video
Building on over 15 years experience in copper-clip package production, Nexperia enhances the market-leading LFPAK range with the addition of LFPAK88. Providing up to 48 times power density compared to wire bond alternatives, and the robust and reliable characteristics synonymous with Nexperia’s LFPAK technology, LFPAK88 is ideally suited for high-power industrial applications. Also qualified to AEC-Q101 standards it provides the perfect solution for automotive power steering, reverse battery protection, and DC/DC conversion applications.
LFPAK88 Blog
As the industry demands more space savings, power density and current handling capabilities, Nexperia’s latest copper clip package delivers significant improvements. Combining low RDSon and high ID, the LFPAK88 sets the benchmark for power density to over 1 W/mm3.
主要特性和優(yōu)勢
Features and benefits
- 8mm x 8mm footprint
- 23x power-density compared to wire bonded equivalents
- Advanced package design exceeds 2x AEC-Q101
- Ultra low On-Resistance
- Copper clip technology gives low electrical and thermal resistance
- Best-in-class linear mode (SOA) performance in-rush and surge protection
關(guān)鍵應(yīng)用
Applications
The versatility of the LFPAK88 makes it suitable for a wide variety of applications
| Automotive
|
Industrial
|
Parametric search
LFPAK88 MOSFETs
數(shù)據(jù)加載中，請稍候...參數(shù)搜索不可用。
Products
Automotive qualified products (AEC-Q100/Q101)
| 型號 | 描述 | 狀態(tài) | 快速訪問 |
|---|---|---|---|
| BUK7S1R2-40H | N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88 | Production | |
| BUK7S2R5-40H | N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88 | Production | |
| BUK7S0R7-40H | N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88 | Production | |
| BUK7S2R0-40H | N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88 | Production | |
| BUK7S0R5-40H | N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 | Production | |
| BUK7S1R5-40H | N-channel 40 V, 1.5 mOhm standard level MOSFET in LFPAK88 | Production | |
| BUK7S1R0-40H | N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88 | Production |
MOSFETs
| 型號 | 描述 | 狀態(tài) | 快速訪問 |
|---|---|---|---|
| BUK7S1R2-40H | N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88 | Production | |
| BUK7S2R5-40H | N-channel 40 V, 2.5 mOhm standard level MOSFET in LFPAK88 | Production | |
| BUK7S0R7-40H | N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88 | Production | |
| BUK7S2R0-40H | N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88 | Production | |
| BUK7S0R5-40H | N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 | Production | |
| BUK7S1R5-40H | N-channel 40 V, 1.5 mOhm standard level MOSFET in LFPAK88 | Production | |
| BUK7S1R0-40H | N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88 | Production | |
| PSMN1R1-50SLH | N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology | EndOfLife | |
| PSMNR90-50SLH | N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 | Production | |
| PSMN1R2-55SLH | N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 | Production | |
| PSMN2R3-100SSE | N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 | Production | |
| PSMNR55-40SSH | N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMN2R3-100SSJ | N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 | Development | |
| PSMN1R9-80SSE | N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88 | Production | |
| PSMN2R5-80SSE | N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88 | Production | |
| PSMN2R9-100SSE | N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 | Production | |
| PSMN1R0-40SSH | N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMN2R6-100SSF | NextPower 100 V, 2.6 mOhm, 200 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMN3R3-100SSF | NextPower 100 V, 3.3 mOhm, 180 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMN2R3-80SSF | NextPower 80 V, 2.3 mOhm, 240 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMN2R0-100SSF | NextPower 100 V, 2.07 mOhm, 267 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMNR70-40SSH | N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMN1R8-80SSF | NextPower 80 V, 1.8 mOhm, 270 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMN2R8-80SSF | NextPower 80 V, 2.8 mOhm, 205 Amp, N-channel MOSFET in LFPAK88 package | Production | |
| PSMN1R3-80SSF | NextPower 80 V, 1.2 mOhm, 335 Amp, N-channel MOSFET in LFPAK88 package | Qualification |
Documentation
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| AN11599.pdf | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| LFPAK88_sot1235_mk.png | plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body | Marcom graphics | 2019-04-10 |
| vp_LFPAK88.zip | LFPAK88 MOSFETs | Value proposition | 2019-05-14 |
| AN90017.pdf | Load switches for mobile and computing applications | Application note | 2020-09-02 |
| AN90016.pdf | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| nexperia_document_leaflet_LFPAK88_2022.pdf | LFPAK88 - Driving power-density to the next level | Leaflet | 2022-03-09 |
| nexperia_document_leaflet_LFPAK88_2022_CHN.pdf | LFPAK88 將功率密度提升到新高度 | Leaflet | 2022-03-10 |
| AN10273.pdf | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN50013.pdf | Thermal performance of power MOSFETs in copper-clip LFPAK88 packages versus bare die | Application note | 2023-02-18 |
| Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
| AN90003.pdf | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
| TN00008.pdf | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| AN11158.pdf | Understanding power MOSFET data sheet parameters | Application note | 2025-02-18 |
如果您有支持方面的疑問，請告知我們。如需獲得設(shè)計(jì)支持，請告知我們并填寫應(yīng)答表，我們會盡快回復(fù)您。
請?jiān)L問我們的聯(lián)系我們或{1}。