A pump motor is use to re-pressurize the systems when the ABS system operates. Typically a single MOSFET is used for one direction ON-OFF pump motor control with PWM used to give speed control. No freewheel diode used in high-side version with the MOSFET clamping (linear mode) when the motor is switched off.
Solenoids are used for controlling brake pressure. Low-side MOSFETs are used for solenoid driving and body diode is avalanched to improve solenoid drop out time. The MOSFET must be avalanche rugged.
Reverse polarity protection can be added using another single MOSFET with a simple gate drive.
The safety switch MOSFET is normally continuously ON.
LFPAK56 (Single & Dual Power-SO8) MOSFETs are ideally suited to provide compact and thermally stable solutions for braking systems.
Main benefits:
- Robust product using advanced copper clip technology
- Excellent current handling
- Compact footprint
D2PAK MOSFETs can provide solutions for the safety switch and reverse polarity protection tasks. The reverse polarity protection device could be a 30 V low RDSon MOSFET.
Main benefits:
- Low on-resistance
- Low thermal resistance
- Highest current handling capability
Parametric search
數(shù)據(jù)加載中，請(qǐng)稍候...Products
Automotive qualified products (AEC-Q100/Q101)
| 型號(hào) | 描述 | 狀態(tài) | 快速訪問(wèn) |
|---|---|---|---|
| BUK762R4-60E | N-channel TrenchMOS standard level FET | Production | |
| BUK763R1-60E | N-channel TrenchMOS standard level FET | Production | |
| BUK9Y4R8-60E | N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 | Production | |
| BUK9Y3R0-40E | N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 | Production | |
| BUK9K6R2-40E | Dual N-channel TrenchMOS logic level FET | Production | |
| BUK7K6R2-40E | Dual N-channel 40 V, 5.8 m? standard level MOSFET | Production | |
| BUK762R9-40E | N-channel TrenchMOS standard level FET | Production | |
| BUK9Y59-60E | N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56 | Production | |
| BUK762R0-40E | N-channel TrenchMOS standard level FET | EndOfLife | |
| BUK9M24-60E | N-channel 60 V, 24 mΩ logic level MOSFET in LFPAK33 | Production |
MOSFETs
| 型號(hào) | 描述 | 狀態(tài) | 快速訪問(wèn) |
|---|---|---|---|
| BUK762R4-60E | N-channel TrenchMOS standard level FET | Production | |
| BUK763R1-60E | N-channel TrenchMOS standard level FET | Production | |
| BUK9Y4R8-60E | N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 | Production | |
| BUK9Y3R0-40E | N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 | Production | |
| BUK9K6R2-40E | Dual N-channel TrenchMOS logic level FET | Production | |
| BUK7K6R2-40E | Dual N-channel 40 V, 5.8 m? standard level MOSFET | Production | |
| BUK762R9-40E | N-channel TrenchMOS standard level FET | Production | |
| BUK9Y59-60E | N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56 | Production | |
| BUK762R0-40E | N-channel TrenchMOS standard level FET | EndOfLife | |
| BUK9M24-60E | N-channel 60 V, 24 mΩ logic level MOSFET in LFPAK33 | Production |
Documentation
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| compleet_3_brake.png | Brake | Marcom graphics | 2015-03-18 |
| vp_1426689577426.zip | Focus MOSFET application – Braking (ABS) | Value proposition | 2017-04-06 |
| Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
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