可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PTVS4V5D1BL | PTVS4V5D1BLYL | 934070788315 | SOD882 | 訂單產(chǎn)品 |
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Click here for more informationPTVS4V5D1BL
Ultra compact Transient Voltage Supressor
Transient voltage supressor in a DFN1006-2 (SOD882) ultra small and leadless Surface-Mounted Device (SMD) package designed to protect one line against high surge currents and other transients.
Alternatives
Features and benefits
Bidirectional ESD protection of one line
Very high surge robustness; IPP = 38.3 A for 8/20 μs pulse (average measured)
Very low clamping voltage: VCL= 10.3 V typ. for 34 A, 8/20 μs pulse
ESD protection up to 30 kV
Very low dynamical resistance Rdyn = 0.1 ? (TLP)
AEC-Q101 qualified
Applications
Surge protection for:
supply and battery lines
audio interfaces
in portable communication, consumer and computing devices.
參數(shù)類型
| 型號(hào) | Package name | Configuration | Nr of lines | VBR [typ] (V) | IPPM @8/20 μs [max] (A) | VESD IEC61000-4-2 (kV) | IRM [max] (μA) | Tj [max] (°C) |
|---|---|---|---|---|---|---|---|---|
| PTVS4V5D1BL | DFN1006-2 | Bidirectional | 1 | - | 34 | 30 | 0.05 | 150 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PTVS4V5D1BL | PTVS4V5D1BLYL (934070788315) |
Active | J5 |
DFN1006-2 (SOD882) |
SOD882 |
REFLOW_BG-BD-1
|
SOD882_315 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PTVS4V5D1BL | PTVS4V5D1BLYL | PTVS4V5D1BL |
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文檔 (12)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PTVS4V5D1BL | Ultra compact Transient Voltage Suppressor | Data sheet | 2017-08-30 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
| SOD882 | 3D model for products with SOD882 package | Design support | 2019-10-07 |
| Nexperia_document_leaflet_MobileTVS_201804 | TVS for Mobile applications | Leaflet | 2018-05-08 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1006-2_SOD882_mk | plastic, leadless ultra small package; 2 terminals; 0,65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Marcom graphics | 2017-01-28 |
| SOD882 | plastic, leadless ultra small package; 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Package information | 2022-05-20 |
| SOD882_315 | DFN1006-2; Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2021-01-27 |
| PTVS4V5D1BL_Nexperia_Product_Reliability | PTVS4V5D1BL Nexperia Product Reliability | Quality document | 2024-04-29 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PTVS4V5D1BL | PTVS4V5D1BL SPICE Model | SPICE model | 2017-12-14 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PTVS4V5D1BL | PTVS4V5D1BL SPICE Model | SPICE model | 2017-12-14 |
| SOD882 | 3D model for products with SOD882 package | Design support | 2019-10-07 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PTVS4V5D1BL | PTVS4V5D1BLYL | 934070788315 | Active | SOD882_315 | 10,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.