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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PSMN012-25YLC

N-channel 25 V 12.6 m? logic level MOSFET in LFPAK using NextPower technology

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • High reliability Power SO8 package, qualified to 175°C
  • Low parasitic inductance and resistance
  • Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
  • Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads

Applications

  • DC-to-DC converters
  • Load switching
  • Synchronous buck regulator

參數(shù)類(lèi)型

型號(hào) Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN012-25YLC SOT669 LFPAK56; Power-SO8 End of life N 1 25 12.6 16.6 175 33 1.22 3.8 8.3 26 4.6 1.66 N 528 145 2011-09-27

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN012-25YLC PSMN012-25YLC,115
(934066022115)
Obsolete 12C25L P** XXYY AZ BATCH NUMBER SOT669
LFPAK56; Power-SO8
(SOT669)
SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PSMN012-25YLC PSMN012-25YLC,115 PSMN012-25YLC rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (21)

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
PSMN012-25YLC N-channel 25 V 12.6 m? logic level MOSFET in LFPAK using NextPower technology Data sheet 2011-10-25
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2025-02-18
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2025-03-20
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90063 Questions about package outline drawings Application note 2025-03-12
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2025-03-20
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN012-25YLC PSMN012-25YLC SPICE model SPICE model 2011-10-03
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN012-25YLC PSMN012-25YLC thermal model Thermal model 2011-10-03
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
PSMN012-25YLC PSMN012-25YLC SPICE model SPICE model 2011-10-03
PSMN012-25YLC PSMN012-25YLC thermal model Thermal model 2011-10-03
SOT669 3D model for products with SOT669 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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