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Click here for more informationHEF40098BT
Hex inverting buffer; 3-state
The HEF40098B is a hex inverting buffer with 3-state outputs. The 3-state outputs are controlled by two active LOW enable inputs (1OE and 2OE). A HIGH on 1OE causes four of the six active LOW buffer elements (1Y0 to 1Y3) to assume a high-impedance or OFF-state regardless of the other input conditions and a HIGH on 2OE causes the outputs of the remaining two buffer elements (2Y0 and 2Y1) to assume a high-impedance or OFF-state regardless of the other input conditions.
It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS (usually ground). Unused inputs must be connected to VDD, VSS, or another input.
Features and benefits
Fully static operation
5 V, 10 V, and 15 V parametric ratings
Standardized symmetrical output characteristics
Specified from -40 °C to +85 °C
Complies with JEDEC standard JESD 13-B
Applications
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| HEF40098BT | HEF40098BT,652 (933373410652) |
Obsolete | no package information | ||||
| HEF40098BT,653 (933373410653) |
Obsolete | ||||||
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
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| HEF40098BT | HEF40098BT,652 | HEF40098BT |
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| HEF40098BT | HEF40098BT,653 | HEF40098BT |
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Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
No documents available
PCB Symbol, Footprint and 3D Model
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.