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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

74LVC3G07GF

Triple buffer with open-drain output

The 74LVC3G07 provides three non-inverting buffers.

The output of the device is an open-drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions.

Input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.

Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall time.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • 5 V tolerant input/output for interfacing with 5 V logic

  • High noise immunity

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8-B/JESD36 (2.7 V to 3.6 V).

  • -24 mA output drive (VCC = 3.0 V)

  • CMOS low power consumption

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • Inputs accept voltages up to 5 V

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C.

參數(shù)類型

型號 Package name
74LVC3G07GF XSON8

PCB Symbol, Footprint and 3D Model

Model Name 描述

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

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封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74LVC3G07GF 74LVC3G07GF,115
(935291516115)
Withdrawn / End-of-life SOT1089
XSON8
(SOT1089)
SOT1089 REFLOW_BG-BD-1
SOT1089_115

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74LVC3G07GF 74LVC3G07GF,115 74LVC3G07GF rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (11)

文件名稱 標(biāo)題 類型 日期
74LVC3G07 Triple buffer with open-drain output Data sheet 2023-08-24
AN11009 Pin FMEA for LVC family Application note 2019-01-09
AN90063 Questions about package outline drawings Application note 2025-03-12
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
SOT1089 3D model for products with SOT1089 package Design support 2019-10-07
lvc3g07 74LVC3G07 IBIS model IBIS model 2015-01-15
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
XSON8_SOT1089_mk plastic, extremely thin small outline package; no leads; 8 terminals; 0.55 mm pitch; 1.35 mm x 1 mm x 0.5 mm body Marcom graphics 2017-01-28
SOT1089 plastic, leadless extremely thin small outline package; 8 terminals; 0.35 mm pitch; 1.35 mm x 1 mm x 0.5 mm body Package information 2022-06-03
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
MAR_SOT1089 MAR_SOT1089 Topmark Top marking 2013-06-03

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標(biāo)題 類型 日期
lvc3g07 74LVC3G07 IBIS model IBIS model 2015-01-15
SOT1089 3D model for products with SOT1089 package Design support 2019-10-07

PCB Symbol, Footprint and 3D Model

Model Name 描述

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

Click here for more information

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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