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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

74ALVC16835ADGG

18-bit registered driver; 3-state

The 74ALVC16835A is a 18–bit registered driver. Data flow is controlled by active low output enable (OE), active low latch enable (LE) and clock inputs (CP).

When LE is LOW, the A to Y data flow is transparent. When LE is HIGH and CP is held at LOW or HIGH, the data is latched; on the LOW to HIGH transient of CP the A-data is stored in the latch?/?flip?-?flop.

When OE is LOW the outputs are active. When OE is HIGH, the outputs go to the high impedance OFF–state. Operation of the OE input does not affect the state of the latch?/?flip?-?flop.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.2 V to 3.6 V
  • CMOS low-power consumption
  • Direct interface with TTL levels
  • Current drive ± 24 mA at 3.0 V
  • MULTIBYTE flow-through standard pin-out architecture
  • Low inductance multiple VCC and GND pins for minimum noise and ground bounce
  • Output drive capability 50 ? transmission lines at 85°C
  • Input diodes to accommodate strong drivers
  • Complies with JEDEC standards:
    • JESD8-5 (2.3 V to 2.7 V)
    • JESD8B/JESD36 (2.7 V to 3.6 V)
  • ESD protection:
    • HBM ANSI/ESDA/JEDEC JS-001 exceeds 2000 V
    • CDM JESD22-C101E exceeds 1000 V

Applications

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74ALVC16835ADGG 74ALVC16835ADGG,11
(935267333112)
Obsolete no package information
74ALVC16835ADGG:11
(935267333118)
Obsolete

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74ALVC16835ADGG 74ALVC16835ADGG,11 74ALVC16835ADGG rohs rhf rhf
74ALVC16835ADGG 74ALVC16835ADGG:11 74ALVC16835ADGG rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (2)

文件名稱 標題 類型 日期
74ALVC16835A 18-bit registered driver; 3-state Data sheet 2018-01-19
alv835a alv835a IBIS model IBIS model 2013-04-08

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標題 類型 日期
alv835a alv835a IBIS model IBIS model 2013-04-08

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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